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Resistance & Resistivity Measurement

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  • Gooodlab RMS-1000S series high temperature semiconductor material resistivity measurement system

    CATEGORY AND TAGS:
    Resistance & Resistivity Measurement

    RMS-1000S series semiconductor resistivity measurement system is mainly used for the evaluation and testing of the electrical conductivity of semiconductor materials, the system adopts the four-wire resistance measurement principle for design and development, and can measure the resistance and resistivity of semiconductor materials under high temperature and vacuum atmosphere conditions, and can analyze the curve of the resistance and resistivity of the sample under test with temperature and time. It can be widely used for the resistivity measurement of silicon (si), germanium (ge), gallium arsenide (GaAs), indium antimonide (InSb), GaAsAl, GaAsP, solid solution semiconductors such as Ge-Si, GaAs-GaP, and other bulk materials. Resistivity measurement of materials such as GeSi, GaAs-GaP, etc.

    Temperature range: RT-600℃/1000℃
    Test channel: single channel
    Power supply: 220V±10%, 50Hz
    Temperature rise slope: 0-10℃/min (typical value: 3℃/min)
    Sample size: φ<20mm, d<5mm
    operating temperature: 5 ℃ to + 40 ℃;
    Temperature control accuracy: ± 0.5 ℃
    Electrode material: upper and lower platinum electrodes
    Storage temperature: -40 ℃ to +65 ℃
    Resistance measurement range: 0.1mΩ~100MΩ
    Temperature control mode: PID precise temperature control
    Operating humidity: +40 ℃, relative humidity up to 95% (non-condensing)
    Resistivity measurement range: 1mΩ.cm~10MΩ.cm
    Data storage format: TXT text format
    Equipment size: 630x640x450mm (L×H×W)
    Measurement environment: air, flowing atmosphere, vacuum atmosphere
    Data transmission: USB
    Weight: 38kg
    Measurement method: semiconductor material 2-wire method
    Conformity to standards: ASTM
    Warranty: 1 year

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    • Specifications

    Bailipper RMS-1000S series semiconductor material resistivity measurement system is mainly used for the evaluation and testing of semiconductor material conductivity, the system adopts the four-wire resistance method measurement principle for design and development, can measure the semiconductor material resistance and resistivity under high temperature and vacuum atmosphere conditions, can analyze the measured sample resistance and resistivity curve with temperature and time change. It can be widely used for the resistivity measurement of silicon (si), germanium (ge), arsenide (GaAs), antimonide (InSb), GaAsAl, GaAsP, solid solution semiconductors such as Ge-Si, GaAs-GaP and other bulk materials. Resistivity measurement of materials such as GeSi, GaAs-GaP, etc.

    Temperature range: RT-600°C/1000°C
    Temperature ramp: 0-10°C/min (typical: 3°C/min)
    Temperature control accuracy: ±0.5°C
    Resistance measurement range: 0.1mΩ~100MΩ
    Resistivity measurement range: 1mΩ.cm~10MΩ.cm
    Measurement environment: air, flowing atmosphere, vacuum atmosphere
    Measurement method: 2-wire method for semiconductor materials
    Test channel: single channel
    Sample size: φ<20mm,d<5mm
    Electrode material: upper and lower platinum electrode
    Temperature control mode: PID precise temperature control
    Data storage format: TXT text format
    Data transmission: USB
    Standard: ASTM
    Power supply: 220V±10%, 50Hz
    Operating temperature: 5°C to +40C.
    Storage temperature: -40°C to +659C
    Operating humidity: up to 95% relative humidity at +40C (no cooling) Device size: 630x640x450mm (LxHxW)
    Weight: 38kg
    Warranty: 1 year

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