Partulab RMS-1000P high temperature four-probe measurement system is mainly used to evaluate the electrical conductivity of semiconductor films and sheets, the system adopts the inline four-probe measurement principle and the national standard of single crystal silicon physical test method and reference to the American A.S.T.M. standard design and development, can realize high temperature, vacuum and inert atmosphere conditions to measure silicon, germanium single crystal (bar, wafer) resistivity and silicon The system is designed and developed with reference to the American A.S.T.M. standard and can measure the resistivity of silicon and germanium single crystals (rods and wafers) and the square resistance of silicon epitaxial layers, diffusion layers and ion implantation layers, as well as the square resistance and resistivity of conductive glass (ITO) and other conductive films under high temperature, vacuum and inert atmosphere. The system is widely used in universities, research institutes and business units to study the electrical properties of semiconductor thin film and sheet materials.
Measurement temperature: RT-600°C/1000°C
Temperature ramp: 0-10°C/min (typical value: 3C/min)
Temperature control accuracy: ±0.5°C
Resistance measurement range: 0.1mΩ~100MΩ
Electropositive measurement range: 1mΩ.cm~100MΩ.cm
Square resistance range: 0.1mΩ~100MΩ
Measurement environment: air, flowing atmosphere, vacuum atmosphere
Measurement combination: four-probe double electric measurement combination measurement
Sample size: φ15~30mm, d<4mm sheet or film
Electrode material: tungsten carbide needle / platinum probe
Data storage format: TXT text format
Data transfer: USB
Power supply: 220V±10%, 50Hz
Operating temperature: 5C to +40C.
Storage temperature: -40C to +65C
Operating humidity: up to 95% relative humidity at +40°C (non-condensing)
Equipment size: 630x640x450mm (LxHxW)
Weight:38kg
Warranty: 1 year
